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DMN2005LPK
Maximum Ratings (@T A = 25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 5)
Symbol
V DSS
V GSS
I D
Value
20
± 10
440
Unit
V
V
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T j , T STG
Value
450
218
-65 to +150
Unit
mW
° C/W
° C
Electrical Characteristics (@T A = 25°C unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
?
?
?
?
?
?
10
± 5
V
μA
μA
V GS = 0V, I D = 100 μ A
V DS = 17V, V GS = 0V
V GS = ± 8V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
V GS(th)
R DS (ON)
|Y fs |
0.53
?
?
?
?
?
40
?
0.35
0.4
0.45
0.55
0.65
?
1.2
1.5
1.7
1.7
3.5
3.5
?
V
Ω
mS
V DS = V GS , I D = 100 μ A
V GS = 4V, I D = 10mA
V GS = 2.7V, I D = 200mA
V GS = 2.5V, I D = 10mA
V GS = 1.8V, I D = 200mA
V GS = 1.5V, I D = 1mA
V DS = 3V, I D = 10mA
Notes:
5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
DMN2005LPK
Document number: DS30836 Rev. 9 - 2
2 of 6
www.diodes.com
June 2012
? Diodes Incorporated
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